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| KSA1010 KSA1010 High Speed High Voltage Switching * Industrial Use * Complement to KSC2334 1 TO-220 2.Collector 3.Emitter 1.Base PNP Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25C unless otherwise noted Symbol VCBO VCEO VEBO IC ICP IB PC TJ TSTG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current (DC) *Collector Current (Pulse) Base Current Collector Dissipation (TC=25C) Collector Dissipation (Ta=25C) Junction Temperature Storage Temperature Value - 100 - 100 -7 -7 - 15 - 3.5 40 1.5 150 - 55 ~ 150 Units V V V A A A W W C C * PW300s, Duty Cycle10% (c)2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSA1010 Electrical Characteristics TC=25C unless otherwise noted Symbol VCEO(sus) VCEX(sus)1 Parameter Collector-Emitter Sustaining Voltage Collector-Emitter Sustaining Voltage Test Condition IC = - 5A, IB1 = - 0.5A, L = 1mH IC = - 5A, IB1 = - IB2 = - 0.5A VBE(off) = 5V, L = 180H Clamped IC = - 10A, IB1 = - 1A IB2 = 0.5A, VBE(off) = 5V L = 180H, Clamped VCB = - 100V, IE = 0 VCE = - 100V, RBE = 51 TC = 125C VCE = - 100V, VBE(off) = 1.5V VCE = - 100V, VBE(off) = 1.5V TC = 125C VEB = - 5V, IC= 0 VCE = - 5V, IC = - 0.5A VCE = - 5V, IC = - 3A VCE = - 5V, IC = - 5A IC = - 5A, IB = - 0.5A IC = - 5A, IB = - 0.5A VCC = - 50V, IC = - 5A, IB1 = - IB2 = - 0.5A RL = 10 40 40 20 Min. - 100 - 100 Max. Units V V VCEX(sus)2 Collector-Emitter Sustaining Voltage - 100 V ICBO ICER ICEX1 ICEX2 IEBO hFE1 hFE2 hFE3 VCE(sat) VBE(sat) tON tSTG tF Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Collector Cut-off Current Emitter Cut-off Current * DC Current Gain - 10 -1 - 10 -1 - 10 200 - 0.6 - 1.5 0.5 1.5 0.5 A mA A mA uA * Collector-Emitter Saturation Voltage * Base-Emitter Saturation Voltage Turn On Time Storage Time Fall Time V V s s s Pulse Test: PW350s, Duty Cycle2% hFE Classification Classification hFE2 R 40 ~ 80 O 60 ~ 120 Y 100 ~ 200 (c)2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSA1010 Typical Characteristics -5 IB = -100mA IB = -90mA IB = 0m -8 A 1000 IB = -7 0m A IB = -60mA IB = -50mA IC[A], COLLECTOR CURRENT -4 hFE, DC CURRENT GAIN IB = -40mA -3 VCE = -5.0V 100 IB = -30mA IB = -20mA IB = -10mA -1 -2 10 -0 -0 -1 -2 -3 -4 -5 1 -0.01 -0.1 -1 -10 V CE[V], COLLECTOR-EMITTER VOLTAGE IC[A], COLLECTOR CURRENT Figure 1. Static Characteristic Figure 2. DC current Gain VCE(sat)[V], VBE(sat)[V]SATURATION VOLTAGE -10 -100 IC = 10 IB IC[A], COLLECTOR CURRENT IC Max. (Pulsed) -10 us s 50 0u 10 -1 VBE(sat) Dis s s 0u 30 pa tio n Lim ite d s 1m b S/ -1 d ite m Li s m 10 -0.1 VCE(sat) s 0m 10 -0.1 -0.01 -0.01 -0.01 -0.1 -1 -10 -1 -10 -100 IC[A], COLLECTOR CURRENT VCE[V], COLLECTOR-EMITTER VOLTAGE Figure 3. Base-Emitter Saturation Voltage Collector-Emitter Saturation Voltage Figure 4. Safe Operating Area 160 50 140 120 100 PC[W], POWER DISSIPATION 150 175 200 40 dT(%), IC DERATING 30 80 DI 60 SS IP AT I S/b LIM ITE D 20 40 O N LI M IT E 20 D 10 0 0 25 50 o 75 100 125 0 0 25 50 o 75 100 125 150 175 200 TC[ C], CASE TEMPERATURE TC[ C], CASE TEMPERATURE Figure 5. Derating Curve of Safe Operating Areas Figure 6. Power Derating (c)2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 KSA1010 Package Demensions TO-220 9.90 0.20 1.30 0.10 2.80 0.10 4.50 0.20 (8.70) o3.60 0.10 (1.70) 1.30 -0.05 +0.10 9.20 0.20 (1.46) 13.08 0.20 (1.00) (3.00) 15.90 0.20 1.27 0.10 1.52 0.10 0.80 0.10 2.54TYP [2.54 0.20] 2.54TYP [2.54 0.20] 10.08 0.30 18.95MAX. (3.70) (45 ) 0.50 -0.05 +0.10 2.40 0.20 10.00 0.20 Dimensions in Millimeters (c)2001 Fairchild Semiconductor Corporation Rev. A1, August 2001 TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. STAR*POWERTM FAST(R) OPTOPLANARTM ACExTM BottomlessTM CoolFETTM CROSSVOLTTM DenseTrenchTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FASTrTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM ISOPLANARTM LittleFETTM MicroFETTM MICROWIRETM OPTOLOGICTM PACMANTM POPTM Power247TM PowerTrench(R) QFETTM QSTM QT OptoelectronicsTM Quiet SeriesTM SLIENT SWITCHER(R) SMART STARTTM StealthTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TruTranslationTM TinyLogicTM UHCTM UltraFET(R) VCXTM STAR*POWER is used under license DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 2. A critical component is any component of a life support 1. Life support devices or systems are devices or systems device or system whose failure to perform can be which, (a) are intended for surgical implant into the body, reasonably expected to cause the failure of the life support or (b) support or sustain life, or (c) whose failure to perform device or system, or to affect its safety or effectiveness. when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Preliminary No Identification Needed Full Production Obsolete Not In Production (c)2001 Fairchild Semiconductor Corporation Rev. H3 |
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